Design of Pulse Power Supply for High-Power Semiconductor Laser Diode Arrays

IEEE ACCESS(2019)

引用 10|浏览84
暂无评分
摘要
This paper mainly introduces a design circuit and control method of pulse power supply for high-power semiconductor laser diode arrays. According to the high voltage and large current operating characteristics of semiconductor laser, the control strategy of multi-module cascade topology combined with multiple MOSFET connected in parallel is adopted. The topology of multi-module cascade is presented to meet the requirement of wide output voltage range. The multiple MOSFET connected in parallel in the grounding module is proposed to increase output current of the pulse power supply, and each MOSFET has exclusive closed-loop regulator. The pulse current is controlled by the gate driving voltage of the MOSFET which operates in the linear zone, which can ensure the pulse current to be smooth and stable without overshoot. Digital control and analog control are combined to make the control of the pulse power supply more flexible. An experimental platform with a pulse power of 132.3 kW is built. The parameters of pulse power supply are exhibited: pulse current 210 A, pulse voltage 630 V, pulse width 200 mu s, and repetition frequency 100 Hz.
更多
查看译文
关键词
Semiconductor laser,pulse power supply,multi-module cascade,linear zone
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要