Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT

Masanori Tsukuda,Masaki Sudo,Kazunori Hasegawa,Seiya Abe,Takuya Saraya,Toshihiko Takakura,Munetoshi Fukui,Kazuo Itou,Shinichi Suzuki,Kiyoshi Takeuchi,Tamotsu Ninomiya,Toshiro Hiramoto,Ichiro Omura

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)（2019）

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摘要

Negative biasing of the gate voltage in a scaled insulated gate bipolar transistor (IGBT) during the off-state was modeled and found to be effective against self-turn-on failures. The required self-turn-on-free criteria were verified experimentally.

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关键词

scaled IGBT,self-turn-on,gate shielding layer

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