Thin-Film MOSFET-Based Pressure Sensor

Ethan L.W. Gardner,Andrea De Luca,Julien Philippe,Daniela Dragomirescu,Florin Udrea

ieee sensors（2019）

引用 6|浏览10

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摘要

This article proposes a silicon-on-insulator complementary metal-oxide semiconductor (CMOS) micro-electromechanical system (MEMS) thin-film pressure sensor in which the sensing elements are based on stress-sensitive MOSFETs, and the carrier mobility and channel resistance vary with applied pressure. Four MOSFETs are embedded within a silicon dioxide membrane to form a Wheatstone bridge. The sensor...

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关键词

MOSFET,MOSFET circuits,Pressure sensors,Sensitivity,Logic gates,Threshold voltage

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