A System-Level Framework for Analytical and Empirical Reliability Exploration of STT-MRAM Caches

Spin-transfer torque magnetic RAM (STT-MRAM) is known as the most promising replacement for static random access memory (SRAM) technology in large last-level cache memories (LLC). Despite its high density, nonvolatility, near-zero leakage power, and immunity to radiation as the major advantages, STT-MRAM-based cache memory suffers from high error rates mainly due to retention failure (RF), read di...