Low Write Current and Strong Durability in High-Speed Spintronics Memory (Spin-Hall MRAM and VoCSM) through Development of a Shunt-Free Design Process and W Spin-Hall Electrode

•The VoCSM has a novel structure that combines VCMA and SHE write schemes.•The shunt-free design afforded us a great improvement to achieve a no-shunt bit.•We reduced the write current utilizing a high spin-Hall efficiency by optimizing W.•The VoCSM is very reliable, exhibiting low WER and high endurance.•The high-speed VoCSM could lead to achieving low write current and strong durability.