Modeling Gain Mechanisms in Amorphous Silicon due to efficient carrier multiplication and trap induced junction modulation

Journal of Lightwave Technology(2019)

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摘要
Amorphous materials have low mobility due to their nature of disorder. Surprisingly, some disordered materials showed photocurrent amplification not by conventional photoconductive gain. Recently, amorphous Silicon (a-Si) photodiodes with thin a-Si layer (~40 nm) have shown a gain-bandwidth product of over 2 THz with very low excess noise and also have been used as a gain media in a cascaded syste...
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关键词
Mathematical model,Electron traps,Impact ionization,Electric fields,Photoconductivity,Junctions
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