Performance Enhanced A-Si:H Tfts For 8k Display By Adopting Corrosion Barrier Layer

Chunming Liu,Zhixiong Jiang,Hongyuan Xu,Hang Zhou

2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)（2019）

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摘要

A novel method of reducing the contact resistance (Rc) is presented by adding a corrosion harrier layer between n+ a- Si: H and source/drain electrodes. The performance of novel TFTs is greatly improved by 35% and Rc are effectively decreased from 17.43 Omega.m to 2.97 Omega.m.

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关键词

A-Si:H thin film transistors (TFTs),contact resistance (Rc),TLM

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