Effective Mask Patterning Strategy as Design Complexity and CD Stability

2019 China Semiconductor Technology International Conference (CSTIC)(2019)

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摘要
Design for manufacturing (DFM) is one of the solutions to avoid patterning issues and the resulted yield loss. It is dependent on process capability and manufacturability. As design rule and feature size shrinks, exposure conditions and OPC treatment are more complicated placing more dependence on accurate mask fabrication. This paper studies mask patterning issues in leading edge technology impacted by mask design and complexity. Mask pattern fidelity, CD uniformity, impact on wafer process, and adaptable solutions for yield loss/pattern issues are discussed here. In addition, we will mention mask friendly design and/or OPC, impacts on mask and wafer process based on mask fabrication capability and process of record (POR) for high-end mask technology.
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关键词
high-end mask technology,effective mask patterning strategy,design complexity,design rule,feature size shrinks,exposure conditions,OPC treatment,accurate mask fabrication,edge technology,mask design,mask pattern fidelity,CD uniformity,wafer process,mask fabrication capability,yield loss-pattern issues,CD stability,design for manufacturing,mask friendly design,OPC,process of record
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