Performance of the FBK/INFN/LPNHE thin active edge pixel detectors for the upgrade of the ATLAS Inner Tracker

In view of the LHC upgrade phase towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of thin (100 and 130 mu m thick) and edgeless n-on-p planar pixel sensors produced by FBK-CMM. The production featured standard 50 mu m x 250 mu m pixel-pitch modules, compatible with the ATLAS FE-I4B readout chip, and small 50 mu m x 50 mu m and 25 mu m x 100 mu m pixel-pitch modules, compatible with the RD53A readout chip prototype. After discussing the sensor technology, an overview of 2018 testbeam results of the produced devices will be given, before and after irradiation, with a special focus on the hit efficiency at the detector edge.