Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY(2019)
摘要
We report stable and high performance amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) by using bulk-accumulation (BA) and split active/source/drain layers. The a-IGZO TFTs exhibit the mobility over 80 cm(2)/Vs and extremely stable under bias and mechanical stresses. We demonstrated a 4-inch semitransparent AMOLED using the oxide TFT backplane with the gate driver integrated.
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关键词
flexible TFT,high mobility,oxide,split,thin-film transistor (TFT)
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