Characterization of Indium Doped SnS2.

Indium doping of tin disulfide (SnS2:In) was performed during crystal growth. Both doped and undoped SnS2 crystals exhibit very high electrical resistivity. Thermopower and Hall measurements indicate p-type conductivity for the In doped crystals, whereas n-type conductivity is found for undoped specimens. Photoluminescence measurements reveal the existence of a deep state in SnS2:In, most likely associated with the (In)Sn acceptor. The results show that the luminescence properties can be associated with donor-acceptor recombination emission with strong phonon coupling. This coupling is analyzed in terms of the configuration coordinate (CC) model.