BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect

H. Agarwal,C. Gupta,R. Goel,P. Kushwaha,Y.-K. Lin,M.-Y. Kao,J.-P. Duarte,H.-L. Chang,Y. S. Chauhan,S. Salahuddin, C. Hu

IEEE Transactions on Electron Devices（2019）

引用 23|浏览78

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摘要

A BSIM-based compact model for a high-voltage MOSFET is presented. The model uses the BSIM-BULK (formerly BSIM6) model at its core, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect. The model is symmetric and continuous, is validated with the TCAD simulations and experimental 35- and 90-V LDMOS and 40-V VDMOS transistors, and shows excellent agreement.

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关键词

Resistance,Logic gates,Integrated circuit modeling,Data models,Semiconductor device modeling,Impact ionization,Semiconductor process modeling

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