Continuous-Wave Operation of GaAs-Based 1.5- $\mu$ m GaInNAsSb VCSELs

We demonstrate the first electrically-pumped, GaAs-based vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1500 nm range that operate in continuous wave mode at and above room temperature. The VCSELs employ a dilute-nitride GaInNAsSb/GaNAs multiple quantum well active region, two n-doped AlGaAs/GaAs distributed Bragg reflectors and a GaAs tunnel junction. Continuous-wave single-mode lasing was observed up to 50 °C with room-temperature threshold current densities below 3 kA/cm ² . Small signal measurements indicate that dilute nitride GaInNAsSb/GaNAs active regions are capable of high speed modulation.