Copper Wire Bond Optimization for Power Devices

T. Pinili, R. Manolo, A. Denoyo, B. Yabut, D. Moore, B. Cowell, J. Jenson, K. Truong,Jeff Gambino, R. Watkins,W. Qin, G. Brizar, J. De Clerq

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)（2018）

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摘要

We report on bond pad damage for a smart power device using 50.8 μm (2 mil) diameter Pd-coated Cu wire. We show that the damage can be relatively subtle; the wire bonds on damaged structures have high pull and shear strength, but cracks in the underlying regions lead to metal extrusions that cause electrical shorts.

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关键词

Wire bond,Copper,Power Semiconductor

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