Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates

In this article, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-gallium nitride (GaN) gate high electron mobility transistors (HEMTs), which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can ...