A 20-Gb/S Simultaneous Bidirectional Transceiver Using A Resistor-Transconductor Hybrid In 0.11-Mu M Cmos

IEEE JOURNAL OF SOLID-STATE CIRCUITS(2007)

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摘要
This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-mu m CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm(2) and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10(-12). The area and power overhead due to the hybrid are 0.002 mm(2) and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.
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关键词
bidirectional,CMOS,hybrid,low-power,transceiver
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