Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

Qin Zhou,Honglei Wu,Hui Li,Xi Tang,Zuoyan Qin,Dan Dong,Yan Lin,Chengjin Lu,Ran Qiu,Ruisheng Zheng,Jiannong Wang,Baikui Li

IEEE Journal of the Electron Devices Society（2019）

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摘要

An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au-AlN SBD features a low ideality factor n of 3.3 and an effective Schottky barrier height (SBH) of 1.05 eV at room temperature. The ideality factor n decreases and the effective SBH increases at high temperatures. The temperature dependen...

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关键词

Aluminum nitride,III-V semiconductor materials,Crystals,Nonhomogeneous media,Schottky barriers,Temperature,Substrates

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