All-electrical spin-to-charge conversion in a mesoscopic GaAs hole system

The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field. Using a ballistic, mesoscopic gallium arsenide hole system, here we demonstrate an all-electrical method of spin-to-charge conversion by exploiting non-linear interactions between spin and charge currents. Our work opens up new possibilities for all-electrical and fast detection of spin accumulation without the need for a long spin diffusion length or a magnetic field.