ROBIN: Monolithic-3D SRAM for Enhanced Robustness with In-Memory Computation Support.
IEEE Transactions on Circuits and Systems I: Regular Papers(2019)
摘要
We present a novel 3D-SRAM cells using a monolithic 3D integration technology for realizing both robustness of the cell and in-memory Boolean logic computing capability. The proposed two-layer cell designs make use of additional transistors over the SRAM layer to enable assist techniques as well as provide logic functions (such as AND/NAND, OR/NOR, and XNOR/XOR) or enable content addressability wi...
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关键词
Random access memory,Transistors,Three-dimensional displays,Standards,Robustness,Stability analysis,Delays
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