Design and Analysis of Static Characteristics of VCSEL at 1160 nm for Optical Interconnects

Abstract VCSEL can be used as the transmitter for optical interconnect applications especially for short reach communication. In this research paper, we proposed a VCSEL structure design which can generate the wavelength of 1160 nm. The VCSEL structure is proposed with the aim of small aperture diameter because for optical interconnects applications the size should reduce. Two distributed Bragg reflectors (DBR), i. e. top DBR and bottom DBR are used to confine the active cavity area and InGaAsP/InP material is used for the formation of active cavity region. Then, the performance of the proposed VCSEL is evaluated at various oxide aperture diameters in the range 2–7 µm for anode voltage, anode current and total power emitted is also calculated to achieve optimized performance.