A new technique to analyze RTN signals in resistive memories

A new technique to study random telegraph noise is proposed. It is based on an analysis of the variations of the sampled current instead of the current itself. These current variations are represented following a time-lag-plot scheme. The meaning of the graphical patterns obtained is discussed. Specifically, this new method is very effective for detecting current spikes due to the presence of fast traps. In addition, it can be used to easily detect an unsuitable sampling rate and achieve optimum RTN measurement conditions. This technique has been used for analyzing several current versus time traces for the state-of-the-art Resistive Random Access Memories (RRAMs). The results are analyzed and the patterns obtained with the proposed method are linked to the characteristic features of the corresponding random telegraph noise signals, showing the validity and effectiveness of the proposed method.