A low-temperature and short-annealing process for metal oxide thin film transistors using deep ultraviolet light for roll-to-roll processing

Solution-processed metal oxide semiconductors have superior electron mobility and stability than solution-processed organic semiconductors. However, their fabrication requires a very-high-temperature and long-time annealing process. In this study, we utilized deep ultraviolet (DUV) light to decrease both the temperature and time of the annealing process. High external energy is required to break the organic bonds in a metal oxide film, which is generally supplied by a high-temperature annealing process carried out for a long duration.