The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier

We report on the super-lattice castellated field-effect transistor (SLCFET) device architecture whose unique geometry enables new scaling and optimization strategies for RF power and performance. Measured transistor values show excellent potential for both power and low-noise amplification applications. With ${I}_{\text {DS}} > \text {1.8}$ A/mm, ${f}_{T}=\text {47}$ GHz, and ${f}_{\text {max}}=124$ GHz, we are able to demonstrate ${P}_{out} >6$ W/mm, PAE >45%, and OIP3/PDC = 6 dB at 30 GHz.