Efficient One-Step Decodable Limited Magnitude Error Correcting Codes for Multilevel Cell Main Memories

As technology scales further, dynamic random-access memory (DRAM) scaling faces numerous challenges. Emerging non-volatile main memories (e.g., phase change memories) provide an attractive solution to the challenges faced by DRAM scaling due to their high density and low cost. But phase change memories suffer from the problem of resistance drifts, which are of limited magnitude and causes read rel...