Submillimeter-Wave Schottky Diodes based on Heterogeneous Integration of GaAs onto Silicon

2019 United States National Committee of URSI National Radio Science Meeting (USNC-URSI NRSM)(2019)

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摘要
This paper reports on the design and fabrication of quasi-vertical Schottky diodes for submillimeter-wave applications. Use of the diodes to implement an integrated 160 GHz frequency quadrupler are described.
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关键词
quasivertical Schottky diodes,submillimeter-wave applications,submillimeter-wave Schottky diodes,frequency quadrupler,frequency 160.0 GHz,GaAs,Si
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