Light Emission From A Waveguide Integrated Mos Tunnel Junction
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)(2019)
摘要
We report on light generation via inelastic electron tunneling in a metal-oxide-semiconductor (MOS) junction, which is directly integrated within a silicon photonic waveguide. We generate an optical power of 6.8 pW. (C) 2019 The Author(s)
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关键词
OCIS codes,(230.6080) Sources,(240.7040) Tunneling,(250.5403) Plasmonics
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