Observation of sharp emission lines from Zn-doped GaN

JAPANESE JOURNAL OF APPLIED PHYSICS(2019)

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摘要
We report the observation and characterization of sharp emission lines from Zn-related emission centers in GaN. Initial studies on the emission lines show that they appear only at low temperatures (T < 50 K), are energetically stable, and exhibit linewidths of a few meV. A brief discussion on their possible origins is given. (C) 2019 The Japan Society of Applied Physics
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