A New Soft-Punch-Through Buffer Concept for 600 - 1200V IGBTS

Maxi Andenna,Elizabeth Buitrago,Chiara Corvasce,Charalampos Papadopoulos,Rachid Jabrany,Munaf Rahimo

IET Power Electronics（2019）

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摘要

A new soft-punch-through (SPT) buffer concept for 600-1200 V insulated-gate bipolar transistors (IGBTs) based on thin wafer technology is proposed. The new SPT structure employs an epitaxial layer for the lightly doped n-type drift region, which is grown on a thick starting material or substrate. The n-type substrate serves as the SPT buffer region. The doping concentration of both drift and buffe...

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关键词

buffer layers,doping profiles,insulated gate bipolar transistors,semiconductor epitaxial layers

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