Room-Temperature Wafer Bonding with Titanium Thin Films Based on Formation of Ti/Si Amorphous Layers

Eiji Higurashi,Hayato Azuma,Michitaka Yamamoto,Takeshi Matsumae,Yuichi Kurashima,Hideki Takagi,Tadatomo Suga

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)（2019）

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摘要

Silicon wafers with Ti thin films (thickness: 40 nm) covered with Au thin films (thickness: 4 nm) as passivation layers were bonded at room temperature by surface activated bonding. Bonding was performed immediately after removing the Au passivation layers and deposition of Si nanolayers by Ar fast atom beam irradiation. Amorphous Ti/Si layers formed at the bonding interfaces, and strong void-free bonding was achieved.

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关键词

Bonding,Wafer bonding,Silicon,Gold,Passivation,Atomic layer deposition

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