Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologies

In this paper, the influence of Cl-based gate recess depth on the control of the threshold voltage of AlGaN/GaN Fin-HEMTs by varying the fin width is investigated. When combining Cl-based gate recess technology and the modulation of fin width, as gate recess depth increases, the influence of fin width on the threshold voltage of Fin-HEMTs is diminished. It is implied that the influence of Cl-based gate recess and fin width on the threshold voltage is coupled. It is also instructive and meaningful for the threshold voltage control of AlGaN/GaN Fin-HEMTs by combining Cl-based gate recess and the modulation of fin width.