Integration of Split-gate Flash Memory in 130nm BCD technology For Automotive Applications

Xiaobo Ma, Zin Tun Thant,Huihua Jiang, Namchil Mun, Kok Foong Chong, Ee Ee Yeoh, Bai Yen Nguyen, Ke Dong, Hung Chang Liao, Jianbo Zhou, Zhongxiu Yang, Shiang Yang Ong, Jeoung Mo Koo, Soh Yun Siah, Liz Cuevas, Mandana Tadayoni, Joseph Norman,Yuri Tkachev, Steven Lemke, Sheng-Hsiung Hsueh, Henry Nguyen

2019 Electron Devices Technology and Manufacturing Conference (EDTM)（2019）

引用 2|浏览0

暂无评分

摘要

In this work we successfully integrated the split-gate SuperFlash® ESF1 cell into our 130nm BCD (Bipolar-CMOS-DMOS) platform for automotive applications. The platform enhances the modularity of flash macro in addition to logic devices, high performance power devices up to 85V as well as complimentary analog devices such as a BJT, MIM and Poly Resistor. Besides maintaining BCD device performance, the embedded flash operating temperature range from - 40°C to 170°C, programmability, chip erase & read access time well meet the specifications. Endurance cycling of up to 20k cycles and data retention of over 20 years well satisfy AECQ-100 Automotive Grade 0 requirements.

查看译文

关键词

Automotive engineering,Performance evaluation,Computer architecture,Nonvolatile memory,Silicon,Microprocessors

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要