SiC Power MOSFETs: Designing for Reliability in Wide-Bandgap Semiconductors
2019 IEEE International Reliability Physics Symposium (IRPS)(2019)
摘要
The properties of wide bandgap semiconductors provide new capabilities and also challenges to the development of reliable and rugged power devices. Reliability characterization of fully-processed 1200V, 80 mOhm SiC power MOSFETs show gate oxide reliability projected life> 100 years at a gate voltage of V
Gs
=+25V and T=175°C. These 1200V, 80 mOhm SiC power MOSFETs deliver single-shot unclamped inductive switching avalanche energy greater than 1 Joule and <10
%
parametric shifts after 100,000 repetitive 250 mJ avalanche events. These results suggest that SiC power MOSFETs are suitably reliable and rugged for commercial and industrial applications.
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关键词
MOSFET reliability,power MOSFETs,Silicon Carbide,ruggedness,unclamped inductive switching
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