Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits

G. González-Cordero,M. Pedro,J. Martin-Martinez,M.B. González,F. Jiménez-Molinos,F. Campabadal, N. Nafría,J.B. Roldán

Solid-State Electronics（2019）

引用 19|浏览32

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摘要

•Devices with TiN/Ti-HfO2-W stacks are used to mimic synapses.•A physically-based compact model is employed for the device analysis.•A series of experimental resistive switching cycles has been fitted with the model.

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关键词

Conductive filaments,Neuromorphic applications,Parameter extraction,Physical model,Resistive switching memory,RRAM

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