A Digital In-Analogue Out Logic Gate Based On Metal-Oxide Memristor Devices

2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)(2019)

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摘要
An important cornerstone of data processing is the ability to efficiently capture structure in data and perform data classification. More recently, memristive technologies enabled the incorporation of continuous tuneable resistive elements directly in hardware, thus increasing the efficiency of reconfigurable systems power and area-wise. Memristors are a promising candidate for reconfigurable circuits capable of carrying out classification with physical computing, such as dot-product vector multiplication and accumulation technique. In this work, we demonstrate a novel proof-of-concept memristor-based Digital-In-Analogue-Out logic circuit and present preliminary results highlighting the effect of non-uniform non-linear memristor IV characteristics that result in device-to-device behavioural variation.
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关键词
memristor, Metal Oxide ReRAM, Threshold Logic Gates, dot-product computing, memristive reconfigurable gates
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