Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure

•AlN/GaN/AlN single fin MOS-FinHEMTs were investigated by device simulations and experimental device fabrication and characterization.•DC I-V characteristics of MOS-FinHEMTs varied with the scaling of fin width.•Normally-off MOS-FinHEMT operation will become possible for narrow fin widths.•The potential strain relaxation of the top AlN barrier in the narrow fin structures was addressed.•The effects of ohmic contact resistance, gate-drain and source-gate distance and of the Al2O3 gate dielectric thickness (tox) in MOS-FinHEMTs, were studied.