Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor

Linfeng Lan,Xingqiang Dai,Changchun He,Lu Liu, Xiaobao Yang,Lingyan Liang,Hongtao Cao,Junbiao Peng

IEEE Transactions on Electron Devices（2019）

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摘要

Thin-film transistors (TFTs) with ScInO or MgScInO semiconductors were fabricated with the annealing temperature of only 150 °C. Compared with ScInO TFT, MgScInO TFT exhibited much better stability under negative-bias temperature stress (NBTS) at 60 °C with negative turn-on voltage (VON) shift of -0.6 V at the initial stress stage (≤900 s) and then positive VON shift (>900 s). Firstprinciples calc...

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关键词

Thin film transistors,Thermal stability,Annealing,Stress,Doping,Logic gates,Temperature measurement

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