Reliability Modeling and Analysis of Hot-Carrier Degradation in Multiple-Fin SOI n-Channel FinFETs With Self-Heating

A comprehensive study on hot-carrier degradation (HCD) mechanisms in 14 nm silicon-on-insulator (SOI) n-channel FinFETs is presented. The impact of high-frequency AC stress bias on self-heating (SH) enhanced hot-carrier injection in oxide bulk traps is investigated and compared with the measurement results using the conventional DC stress bias. The influence of SH on electrical parameter degradati...