Nanosails Showcasing Zn 3 As 2 as an Optoelectronic‐Grade Earth Abundant Semiconductor

Zn3As2 is a promising earth-abundant semiconductor material. Its bandgap, around 1 eV, can be tuned across the infrared by alloying and makes this material suited for applications in optoelectronics. Here, we report the crystalline structure and electrical properties of strain-free Zn3As2 nanosails, grown by metal-organic vapor phase epitaxy. We demonstrate that the crystalline structure is consistent with the P4(2)/nmc (D4h15) alpha"-Zn3As2 metastable phase. Temperature-dependent Hall effect measurements indicate that the material is degenerately p-doped with a hole mobility close to 10(3) cm(2) V-1 s(-1). Our results display the potential of Zn3As2 nanostructures for next generation energy harvesting and optoelectronic devices.