Electronic Properties Of Ws2/Wse2 Heterostructure Containing Te Impurity: The Role Of Substituting Position

A. V. Krivosheeva,V. L. Shaposhnikov,V. E. Borisenko,J.-L. Lazzari

INTERNATIONAL JOURNAL OF NANOSCIENCE（2019）

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摘要

An impact of positions of Te atoms substituting W atoms in two-dimensional WS2/WSe2 heterostructures on their electronic properties is investigated by theoretical simulation. The substitution of W by Te tends to reduce the energy band gap and can lead to metallic properties depending on the impurity position and concentration.

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关键词

2D heterostructure, dichalcogenide, electronic property, impurity, substituting position

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