Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts

In this paper, a charge-based analytical model for intrinsic capacitances in tunnel field-effect transistors (TFETs) is presented. The model is derived for a Si Double-Gate (DG) n-TFET whose flexibility is applicable to single-gate or p-type TFETs as well. The model is verified comparing with the TCAD simulations as well as measurements data.