Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD

Here we report on the structural and tribo-mechanical characterization of epitaxial single-crystalline Ti2AlC MAX phase thin films, grown by means of electron beam physical vapor deposition at relatively low temperature (700 degrees C). The growth of phase pure Ti2AlC at a relatively lower temperature when compared to other PVD methods was achieved utilizing a relatively low deposition rate and layer-by-layer deposition technique. The epitaxial growth is evidenced through the combination of XRD, HR-TEM and Raman spectroscopy measurements. The nanomechanical and micro-scale tribological properties of the Ti2AlC thin films were studied by means of nanoindentation and nanoscratch tests. IMPACT STATEMENTThe growth temperature of phase pure single-crystalline Ti2AlC MAX phase thin films was reduced to 700 degrees C utilizing the low-rate layer-by-layer PVD technique. [GRAPHICS]