Temperature-Dependent Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors Down to 10 K

The carrier transport mechanisms in indium-zinc-oxide thin-film transistors are investigated in this paper by use of low-frequency noise (LFN). First, LFNs are measured in the range from 10 to 300 K. The measured noises show that the device is varied from an interface-dominated device to a bulk-dominated device at lower temperature, which induce to the variation of the power coefficient of normali...