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排名必读论文期刊顶会热点AI 简史溯源树小脉星探人才迁徙塔尖人才国防情报追踪开源工具智慧手语
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Growth‐Rate‐Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy (Phys. Status Solidi A 10∕2019)

Zon,Pakawat Phienlumlert,Supachok Thainoi,Suwit Kiravittaya,Aniwat Tandaechanurat,Noppadon Nuntawong,Suwat Sopitpan,Visittapong Yordsri,Chanchana Thanachayanont,Songphol Kanjanachuchai,Somchai Ratanathammaphan,Somsak Panyakeow,Yasutomo Ota,Satoshi Iwamoto,Yasuhiko Arakawa

Physica Status Solidi (a)（2019）

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关键词
gasb/gaas quantum dots,quantum dots,ge substrate,molecular beam epitaxy
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