Effect of Ar partial pressure and substrate temperature of CaLa 4 (Zr 0.05 Ti 0.95 ) 4 O 15 dielectric films

The optical and electrical properties of CaLa 4 (Zr 0.05 Ti 0.95 ) 4 O 15 thin films prepared through radio frequency magnetron sputtering with various Ar/O 2 ratios and substrate temperatures were investigated. All films exhibited the CaLa 4 (Zr 0.05 Ti 0.95 ) 4 O 15 structure with the (110) orientation perpendicular to the substrate surface. The increase in the grain size was depended on the deposition conditions. Optical transmittance spectroscopy revealed over 80% transparency in the visible region of the spectrum. At an Ar/O 2 ration of 100/0, a substrate temperature of 300 °C and an annealing temperature of 900 °C in an oxygen furnace for 60 min, the CaLa 4 (Zr 0.05 Ti 0.95 ) 4 O 15 film possessed a dielectric constant of 12.6 at 1 MHz, a dissipation factor of 0.22 at 1 MHz, a leakage current density of 3.82 × 10 −9 A/cm 2 at an electrical field of 50 kV/cm, average transmission in the visible range of over 80%, and an optical bandgap of 3.82 eV.