EPIC Via Last on SOI Wafer Integration Challenges

Electronics Packaging Technology Conference Proceedings（2018）

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摘要

In this paper, Through Silicon Via (TSV) of Silicon on isolator (SOI) platform on via last wafer integration challenges were evaluated. TSV profile at Buried Oxide (BOX) and bulk Silicon of SOI substrates undercut improvement was assessed. Electroplating (ECP) TSV wafer uniformity and its impact on Chemical Mechanical Polishing (CMP) was discussed. Improvement in Electroplating wafer uniformity has shown significant improvement in CMP remaining oxide uniformity.

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关键词

CMP remaining oxide uniformity,EPIC,isolator platform,bulk silicon,buried oxide,silicon on isolator,through silicon via,SOI wafer integration,electroplating TSV wafer uniformity,chemical mechanical polishing,SOI substrates,Si

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