Trap-Related Breakdown and Filamentary Conduction in Carbon Doped GaN

Christian Koller,Gregor Pobegen,Clemens Ostermaier,Gebhard Hecke, Richard Neumann,Martin Holzbauer,Gottfried Strasser,Dionyz Pogany

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS（2019）

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摘要

A breakdown phenomenon is studied in thin carbon doped GaN layers (GaN:C; carbon concentration 10(19) cm(-3))embedded between a top metal electrode and bottom n-doped GaN (n-GaN). When slowly sweeping positive bias V at the top electrode up and down, a hysteresis is found with transitions to on- and off-states at voltages V-bd,V-up and V-bd,V-down (更多

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关键词

carbon doped GaN,current filamentation,electroluminescence,trap related breakdown

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