High-efficiency AlInSb mid-infrared LED with dislocation filter layers for gas sensors

Journal of Crystal Growth(2019)

引用 10|浏览16
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摘要
•AlxIn1-xSb LED (x = 9.8%) was developed to achieve high luminous intensity at 3.3 μm.•Dislocation filter layers were introduced and improved luminous efficiency.•Emission intensity under 100 mA condition is the highest of any commercial LEDs.•Developed LED is helpful to create low-power-consumption methane (CH4) gas sensor.
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关键词
B3.Infrared devices,B3.Light emitting diodes,A3.Molecular beam epitaxy,B1.Antimonides,B2.Semiconducting III-V materials
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