Propagation of Compact-Modeling Measurement Uncertainty to 220 GHz Power-Amplifier Designs

Asia Pacific Microwave Conference-Proceedings(2018)

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摘要
We study the impact of measurement uncertainties in a heterojunction bipolar transistor (HBT) model and their consequences on the electrical performance under large signal conditions at 9 GHz. Then we use the model with uncertainties to verify the ability of our model to accurately predict the electrical performance of power amplifier designs at 220 GHz. We compare the measured performance of the power amplifiers with simulations and estimated range of performance.
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关键词
Semiconductor device modeling,Heterojunction bipolar transistors,Measurement uncertainty,Millimeter wave power amplifiers
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