Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs

The effect of irradiation with 15 MeV protons on the electrical properties of high-power vertical 4H-SiC MOSFETs of 1.2 kV class has been studied experimentally with doses in the range 0 <= Phi <= 10(14) cm(-2). Dose Phi(cr), signifying the complete degradation of the device, corresponds to the condition Phi cr approximate to n0/eta e (eta e is the electron removal rate and n o is the electron concentration in the unirradiated drift layer). In the devices under study, Phi cr is 10(14) cm(-2). The effect of irradiation on the leakage current, gate-drain capacitance, transconductance, and field mobility was examined.