STT-MRAM Design Technology Co-optimization for Hardware Neural Networks

2018 IEEE International Electron Devices Meeting (IEDM)(2018)

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摘要
The potential of embedded STT-MRAM technology for designing large-scale multiply-and-accumulation (MAC) array circuits are evaluated by comprehensive and holistic design-technology co-optimizations. After careful calibrations with experimental data, post-layout circuit simulations together with GPU-enabled massively parallel Monte Carlo evaluations are conducted to guarantee the designs at rare failure rates. With all critical device and design non-idealities included, architectural emulations are performed to examine the hardware neural network (HNN)'s accuracies and estimate system-level power, performance and area specs. Results indicate the amount of process variation, parasites and error levels to control in order to achieve a feasible solution for STT-MRAM based HNNs.
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关键词
hardware neural networks,embedded STT-MRAM technology,comprehensive design-technology co-optimizations,holistic design-technology co-optimizations,post-layout circuit simulations,design nonidealities,hardware neural network,STT-MRAM Design Technology Co-optimization,large-scale multiply-and-accumulation array circuits,GPU enabled massively parallel Monte Carlo evaluations
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